IXFN32N120
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IXYS IXFN32N120

Manufacturer No:
IXFN32N120
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFN32N120 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 32A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:32A
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:350mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:400 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:15900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN32N120 IXFN32N120P  
Manufacturer IXYS IXYS
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 32A 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V
Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V 310mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 10 V 360 nC @ 10 V
Vgs (Max) - ±30V
Input Capacitance (Ciss) (Max) @ Vds 15900 pF @ 25 V 21000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 1000W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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