IXFN27N80Q
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IXYS IXFN27N80Q

Manufacturer No:
IXFN27N80Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN27N80Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 27A SOT-227B
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN27N80Q IXFN27N80  
Manufacturer IXYS IXYS
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 27A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V, 15V
Rds On (Max) @ Id, Vgs 320mOhm @ 500mA, 10V 300mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 400 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V 9740 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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