IXFN26N90
  • Share:

IXYS IXFN26N90

Manufacturer No:
IXFN26N90
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN26N90 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 26A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$29.20
8

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN26N90 IXFN25N90  
Manufacturer IXYS IXYS
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 13A, 10V 330mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V 10800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 600W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

IRLR3410TRLPBF
IRLR3410TRLPBF
Infineon Technologies
MOSFET N-CH 100V 17A DPAK
IXFH54N65X3
IXFH54N65X3
IXYS
MOSFET 54A 650V X3 TO247
PSMN3R5-80YSFX
PSMN3R5-80YSFX
Nexperia USA Inc.
NEXTPOWER 80 V, 3.5 MOHM, 150 A,
STF28N60M2
STF28N60M2
STMicroelectronics
MOSFET N-CH 600V 24A TO220FP
DMP3097LQ-7
DMP3097LQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
2N7002E,215
2N7002E,215
Nexperia USA Inc.
MOSFET N-CH 60V 385MA TO236AB
IRLZ14
IRLZ14
Vishay Siliconix
MOSFET N-CH 60V 10A TO220AB
IRF1405ZTRR
IRF1405ZTRR
Vishay Siliconix
MOSFET N-CH 55V 75A TO220AB
HUFA76443S3ST
HUFA76443S3ST
onsemi
MOSFET N-CH 60V 75A D2PAK
IPB80N06S2L06ATMA1
IPB80N06S2L06ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
IRF8714GTRPBF
IRF8714GTRPBF
Infineon Technologies
MOSFET N-CH 30V 14A 8SO
TK10S04K3L(T6L1,NQ
TK10S04K3L(T6L1,NQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 10A DPAK

Related Product By Brand

VUO110-12NO7
VUO110-12NO7
IXYS
BRIDGE RECT 3P 1.2KV 127A PWS-E1
MCD44-18IO1B
MCD44-18IO1B
IXYS
MOD THYRISTOR DUAL 1800V TO240AA
MCNA120PD2200TB-NI
MCNA120PD2200TB-NI
IXYS
BIPOLAR MODULE THYRISTOR/DIODE T
IXTA48P05T
IXTA48P05T
IXYS
MOSFET P-CH 50V 48A TO263
IXTA32P05T
IXTA32P05T
IXYS
MOSFET P-CH 50V 32A TO263
IXFX180N07
IXFX180N07
IXYS
MOSFET N-CH 70V 180A PLUS247
IXFX90N30
IXFX90N30
IXYS
MOSFET N-CH 300V 90A PLUS247-3
IXFX12N90Q
IXFX12N90Q
IXYS
MOSFET N-CH 900V 12A PLUS247-3
IXFR75N10Q
IXFR75N10Q
IXYS
MOSFET N-CH 100V ISOPLUS247
IXTQ102N25T
IXTQ102N25T
IXYS
MOSFET N-CH 250V 102A TO3P
IXGH60N60C2
IXGH60N60C2
IXYS
IGBT 600V 75A 480W TO247AD
IXH611P1
IXH611P1
IXYS
IC GATE DRVR HALF BRIDGE 8DIP