IXFN23N100
  • Share:

IXYS IXFN23N100

Manufacturer No:
IXFN23N100
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN23N100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 23A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
284

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN23N100 IXFN24N100  
Manufacturer IXYS IXYS
Product Status Active Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs - 390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs - 267 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 8700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 600W (Tc) 568W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

PJQ2410_R1_00001
PJQ2410_R1_00001
Panjit International Inc.
DFN2020B-6L, MOSFET
TSM018NA03CR RLG
TSM018NA03CR RLG
Taiwan Semiconductor Corporation
MOSFET N-CH 30V 185A 8PDFN
FQU2N60CTU
FQU2N60CTU
onsemi
MOSFET N-CH 600V 1.9A IPAK
SQJQ402E-T1_GE3
SQJQ402E-T1_GE3
Vishay Siliconix
MOSFET N-CH 40V 200A PPAK 8 X 8
STF25N60M2-EP
STF25N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 18A TO220FP
HUFA76419S3ST
HUFA76419S3ST
Fairchild Semiconductor
MOSFET N-CH 60V 29A D2PAK
PJD60R980E_L2_00001
PJD60R980E_L2_00001
Panjit International Inc.
600V N-CHANNEL SUPER JUNCTION MO
IPLK80R2K0P7ATMA1
IPLK80R2K0P7ATMA1
Infineon Technologies
MOSFET 800V TDSON-8
STP4NK50Z
STP4NK50Z
STMicroelectronics
MOSFET N-CH 500V 3A TO220AB
SIA850DJ-T1-GE3
SIA850DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 190V 950MA PPAK
NDDL01N60Z-1G
NDDL01N60Z-1G
onsemi
MOSFET N-CH 600V 800MA IPAK
RQ3E120GNTB
RQ3E120GNTB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8HSMT

Related Product By Brand

MDD95-18N1B
MDD95-18N1B
IXYS
DIODE MODULE 1.8KV 120A TO240AA
DSEP2X60-12A
DSEP2X60-12A
IXYS
DIODE MODULE 1.2KV 60A SOT227B
DSEP15-06BS-TRL
DSEP15-06BS-TRL
IXYS
POWER DIODE DISCRETES-FRED TO-26
MCMA140P1600TA
MCMA140P1600TA
IXYS
SCR MODULE 1.6KV 140A TO240AA
MCD40-12IO6
MCD40-12IO6
IXYS
MOD THYRISTOR/DIO 1200V SOT-227B
MCD26-16IO8B
MCD26-16IO8B
IXYS
MOD THYRISTOR/DIO 1600V TO-240AA
IXFQ50N60P3
IXFQ50N60P3
IXYS
MOSFET N-CH 600V 50A TO3P
IXKP24N60C5M
IXKP24N60C5M
IXYS
MOSFET N-CH 600V 8.5A TO220ABFP
IXTT12N140
IXTT12N140
IXYS
MOSFET N-CH 1400V 12A TO268
IXTH06N220P3HV
IXTH06N220P3HV
IXYS
MOSFET N-CH 2200V 600MA TO247HV
IXGA12N120A3-TRL
IXGA12N120A3-TRL
IXYS
IXGA12N120A3 TRL
IXGH40N60
IXGH40N60
IXYS
IGBT 600V 75A 250W TO247AD