IXFN210N30X3
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IXYS IXFN210N30X3

Manufacturer No:
IXFN210N30X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN210N30X3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 210A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 105A, 10V
Vgs(th) (Max) @ Id:4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:375 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:24200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):695W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN210N30X3 IXFN210N30P3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 210A (Tc) 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 105A, 10V 14.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 375 nC @ 10 V 268 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 24200 pF @ 25 V 16200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 695W (Tc) 1500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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