IXFN200N10P
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IXYS IXFN200N10P

Manufacturer No:
IXFN200N10P
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFN200N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 200A SOT-227B
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:235 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):680W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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In Stock

$26.88
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Similar Products

Part Number IXFN200N10P IXFN300N10P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 295A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 500mA, 10V 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 235 nC @ 10 V 279 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600 pF @ 25 V 23000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 680W (Tc) 1070W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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