IXFN200N07
  • Share:

IXYS IXFN200N07

Manufacturer No:
IXFN200N07
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN200N07 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 70V 200A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):70 V
Current - Continuous Drain (Id) @ 25°C:200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:480 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
186

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN200N07 IXFN280N07  
Manufacturer IXYS IXYS
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 70 V 70 V
Current - Continuous Drain (Id) @ 25°C 200A (Tc) 280A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 500mA, 10V 5mOhm @ 120A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 480 nC @ 10 V 420 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 9400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

FQPF5N60CYDTU
FQPF5N60CYDTU
Fairchild Semiconductor
MOSFET N-CH 600V 4.5A TO220F-3
STI18N65M5
STI18N65M5
STMicroelectronics
MOSFET N CH 650V 15A I2PAK
IPP129N10NF2SAKMA1
IPP129N10NF2SAKMA1
Infineon Technologies
TRENCH >=100V
IRF2804STRLPBF
IRF2804STRLPBF
Infineon Technologies
MOSFET N-CH 40V 75A D2PAK
CSD18503Q5A
CSD18503Q5A
Texas Instruments
MOSFET N-CH 40V 19A/100A 8VSON
PMK30EP518
PMK30EP518
NXP USA Inc.
P-CHANNEL POWER MOSFET
DMP31D7LT-13
DMP31D7LT-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT523 T&R
NTMFS5H630NLT1G
NTMFS5H630NLT1G
onsemi
MOSFET N-CH 60V 22A/120A 5DFN
IRF614STRR
IRF614STRR
Vishay Siliconix
MOSFET N-CH 250V 2.7A D2PAK
FDS4780
FDS4780
onsemi
MOSFET N-CH 40V 10.8A 8SOIC
FDWS9508L-F085
FDWS9508L-F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
RS1E200GNTB
RS1E200GNTB
Rohm Semiconductor
MOSFET N-CH 30V 20A 8HSOP

Related Product By Brand

DSEI12-06A
DSEI12-06A
IXYS
DIODE GEN PURP 600V 14A TO220AC
IXFA72N20X3
IXFA72N20X3
IXYS
MOSFET N-CH 200V 72A TO263AA
IXFB82N60P
IXFB82N60P
IXYS
MOSFET N-CH 600V 82A PLUS264
IXTP48P05T
IXTP48P05T
IXYS
MOSFET P-CH 50V 48A TO220AB
IXFX78N50P3
IXFX78N50P3
IXYS
MOSFET N-CH 500V 78A PLUS247-3
IXFK20N120
IXFK20N120
IXYS
MOSFET N-CH 1200V 20A TO264AA
IXTP1N100
IXTP1N100
IXYS
MOSFET N-CH 1000V 1.5A TO220AB
IXFR12N100Q
IXFR12N100Q
IXYS
MOSFET N-CH 1000V 10A ISOPLUS247
IXA55I1200HJ
IXA55I1200HJ
IXYS
IGBT 1200V 84A 290W TO247
IXGR40N60C2
IXGR40N60C2
IXYS
IGBT 600V 56A 170W ISOPLUS247
IXGX28N140B3H1
IXGX28N140B3H1
IXYS
IGBT 1400V 60A 300W PLUS247
IXDI430MYI
IXDI430MYI
IXYS
IC GATE DRVR LOW-SIDE TO263