IXFN170N30P
  • Share:

IXYS IXFN170N30P

Manufacturer No:
IXFN170N30P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN170N30P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 138A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:138A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 85A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:258 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:20000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$44.98
18

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN170N30P IXFN140N30P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 138A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 85A, 10V 24mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 258 nC @ 10 V 185 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 25 V 14800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 890W (Tc) 700W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

FQP7P06
FQP7P06
onsemi
MOSFET P-CH 60V 7A TO220-3
NTD6416ANT4G
NTD6416ANT4G
onsemi
MOSFET N-CH 100V 17A DPAK
VN10KN3-G-P002
VN10KN3-G-P002
Microchip Technology
MOSFET N-CH 60V 310MA TO92-3
NP36P04KDG-E1-AY
NP36P04KDG-E1-AY
Renesas Electronics America Inc
MOSFET P-CH 40V 36A TO263
STP11NM60FD
STP11NM60FD
STMicroelectronics
MOSFET N-CH 600V 11A TO220AB
IRL3103D1S
IRL3103D1S
Infineon Technologies
MOSFET N-CH 30V 64A D2PAK
IRF2807ZLPBF
IRF2807ZLPBF
Infineon Technologies
MOSFET N-CH 75V 75A TO262
BSP300 E6327
BSP300 E6327
Infineon Technologies
MOSFET N-CH 800V 190MA SOT223-4
IXFH16N90Q
IXFH16N90Q
IXYS
MOSFET N-CH 900V 16A TO247AD
SI5855DC-T1-E3
SI5855DC-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 2.7A 1206-8
IRFR3504TRLPBF
IRFR3504TRLPBF
Infineon Technologies
MOSFET N-CH 40V 30A DPAK
IRF7521D1TRPBF
IRF7521D1TRPBF
Infineon Technologies
MOSFET N-CH 20V 2.4A MICRO8

Related Product By Brand

MDA95-22N1B
MDA95-22N1B
IXYS
DIODE MODULE 2.2KV 120A TO240AA
DSI30-16A
DSI30-16A
IXYS
DIODE GEN PURP 1.6KV 30A TO220AC
DSA300I100NA
DSA300I100NA
IXYS
DIODE SCHOTTKY 100V 300A SOT227B
MCC132-08IO1
MCC132-08IO1
IXYS
MOD THYRISTOR DUAL 800V Y4-M6
IXTA3N120-TRL
IXTA3N120-TRL
IXYS
MOSFET N-CH 1200V 3A TO263
IXTA08N100D2HV-TRL
IXTA08N100D2HV-TRL
IXYS
MOSFET N-CH 1000V 800MA TO263HV
IXTA1N120P-TRL
IXTA1N120P-TRL
IXYS
MOSFET N-CH 1200V 1A TO263
IXFT58N20Q
IXFT58N20Q
IXYS
MOSFET N-CH 200V 58A TO268
IXTY3N60P
IXTY3N60P
IXYS
MOSFET N-CH 600V 3A TO252
IXFE36N100
IXFE36N100
IXYS
MOSFET N-CH 1000V 33A SOT227B
IXGP30N60C3C1
IXGP30N60C3C1
IXYS
IGBT 600V 60A 220W TO220
IXDF404SIA
IXDF404SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC