IXFN170N10
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IXYS IXFN170N10

Manufacturer No:
IXFN170N10
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN170N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 170A SOT-227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:515 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):600W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN170N10 IXFN180N10   IXFN150N10  
Manufacturer IXYS IXYS IXYS
Product Status Not For New Designs Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 180A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 500mA, 10V 8mOhm @ 500mA, 10V 12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 515 nC @ 10 V 360 nC @ 10 V 360 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V 9100 pF @ 25 V 9000 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 600W (Tc) 600W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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