IXFN150N10
  • Share:

IXYS IXFN150N10

Manufacturer No:
IXFN150N10
Manufacturer:
IXYS
Package:
Bulk
Datasheet:
IXFN150N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 150A SOT-227
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:360 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

$31.92
2

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN150N10 IXFN170N10   IXFN150N15   IXFN180N10  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Not For New Designs Not For New Designs Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 150 V 100 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc) 170A (Tc) 150A (Tc) 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 75A, 10V 10mOhm @ 500mA, 10V 12.5mOhm @ 75A, 10V 8mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 360 nC @ 10 V 515 nC @ 10 V 360 nC @ 10 V 360 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 10300 pF @ 25 V 9100 pF @ 25 V 9100 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 520W (Tc) 600W (Tc) 600W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

RFP45N06
RFP45N06
Fairchild Semiconductor
MOSFET N-CH 60V 45A TO220-3
IPI023NE7N3G
IPI023NE7N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
STF16N65M5
STF16N65M5
STMicroelectronics
MOSFET N-CH 650V 12A TO220FP
CSD18503Q5A
CSD18503Q5A
Texas Instruments
MOSFET N-CH 40V 19A/100A 8VSON
SQJ446EP-T1_BE3
SQJ446EP-T1_BE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) 175C MOSFET
DMP65H11D0HSS-13
DMP65H11D0HSS-13
Diodes Incorporated
MOSFET BVDSS: 501V~650V SO-8 T&R
HUF75639P3-F102
HUF75639P3-F102
onsemi
MOSFET N-CH 100V 56A TO220-3
STH320N4F6-6
STH320N4F6-6
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
IXFT120N15P
IXFT120N15P
IXYS
MOSFET N-CH 150V 120A TO268
SI7866ADP-T1-GE3
SI7866ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 20V 40A PPAK SO-8
STFILED627
STFILED627
STMicroelectronics
MOSFET N-CH 620V 7A I2PAKFP
BSC020N03LSGATMA2
BSC020N03LSGATMA2
Infineon Technologies
LV POWER MOS

Related Product By Brand

DSEI8-06A
DSEI8-06A
IXYS
DIODE GEN PURP 600V 8A TO220AC
DSAI75-16B
DSAI75-16B
IXYS
DIODE AVALANCHE 1.6KV 110A DO203
DSS10-01AS-TRL
DSS10-01AS-TRL
IXYS
DIODE SCHOTTKY 100V 10A TO263AB
DSS2-60AT2AP
DSS2-60AT2AP
IXYS
DIODE SCHOTTKY 60V 2A TO92-3
MCC501-16IO2
MCC501-16IO2
IXYS
SCR THY PHASE LEG 1600V WC-501
IXFN38N100Q2
IXFN38N100Q2
IXYS
MOSFET N-CH 1000V 38A SOT-227
IXTC36P15P
IXTC36P15P
IXYS
MOSFET P-CH 150V 22A ISOPLUS220
IXFE44N50QD3
IXFE44N50QD3
IXYS
MOSFET N-CH 500V 39A SOT-227B
IXFT80N15Q
IXFT80N15Q
IXYS
MOSFET N-CH 150V 80A TO268
IXXH30N60B3D1
IXXH30N60B3D1
IXYS
IGBT 600V 60A 270W TO247
IXYX100N65B3D1
IXYX100N65B3D1
IXYS
IGBT 650V 188A 1150W PLUS247
IXGX32N170AH1
IXGX32N170AH1
IXYS
IGBT 1700V 32A 350W PLUS247