IXFN106N20
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IXYS IXFN106N20

Manufacturer No:
IXFN106N20
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN106N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 106A SOT-227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:106A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:380 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):521W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN106N20 IXFN100N20  
Manufacturer IXYS IXYS
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 106A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 500mA, 10V 23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V 380 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 9000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 521W (Tc) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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