IXFN100N65X2
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IXYS IXFN100N65X2

Manufacturer No:
IXFN100N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN100N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 78A SOT227B
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:78A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:183 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):595W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
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Similar Products

Part Number IXFN100N65X2 IXFN150N65X2   IXFN170N65X2   IXFN120N65X2  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 78A (Tc) 145A (Tc) 170A (Tc) 108A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 10V 17mOhm @ 75A, 10V 13mOhm @ 85A, 10V 24mOhm @ 54A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 8mA 5V @ 8mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 183 nC @ 10 V 355 nC @ 10 V 434 nC @ 10 V 225 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 10800 pF @ 25 V 21000 pF @ 25 V 27000 pF @ 25 V 15500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 595W (Tc) 1040W (Tc) 1170W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

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