IXFN100N20
  • Share:

IXYS IXFN100N20

Manufacturer No:
IXFN100N20
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN100N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 100A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:380 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
473

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN100N20 IXFN120N20   IXFN180N20   IXFN106N20   IXFN100N25  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Not For New Designs Not For New Designs Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc) 180A (Tc) 106A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V 17mOhm @ 500mA, 10V 10mOhm @ 500mA, 10V 20mOhm @ 500mA, 10V 27mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA 4V @ 8mA 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V 360 nC @ 10 V 660 nC @ 10 V 380 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 9100 pF @ 25 V 22000 pF @ 25 V 9000 pF @ 25 V 9100 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 520W (Tc) 600W (Tc) 700W (Tc) 521W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

IRF2805STRLPBF
IRF2805STRLPBF
Infineon Technologies
MOSFET N-CH 55V 135A D2PAK
IRL1404PBF-INF
IRL1404PBF-INF
Infineon Technologies
MOSFET N-CH 40V 160A TO220AB
2N7002E-T1-GE3
2N7002E-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 240MA TO236
DMP3099L-13
DMP3099L-13
Diodes Incorporated
MOSFET P-CH 30V 3.8A SOT23
IRF3805STRL-7PP
IRF3805STRL-7PP
Infineon Technologies
MOSFET N-CH 55V 160A D2PAK
SIR626DP-T1-RE3
SIR626DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 60V 100A PPAK SO-8
SI2316DS-T1-GE3
SI2316DS-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 2.9A SOT23-3
SI7454DP-T1-GE3
SI7454DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 100V 5A PPAK SO-8
IPD65R420CFDAATMA1
IPD65R420CFDAATMA1
Infineon Technologies
MOSFET N-CH 650V 8.7A TO252-3
IXTY32P05T
IXTY32P05T
IXYS
MOSFET P-CH 50V 32A TO252
IXTA24N65X2
IXTA24N65X2
IXYS
MOSFET N-CH 650V 24A TO263AA
STK850
STK850
STMicroelectronics
MOSFET N-CH 30V 30A POLARPAK

Related Product By Brand

DNA40U2200GU
DNA40U2200GU
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSEP30-12B
DSEP30-12B
IXYS
POWER DIODE DISCRETES-FRED TO-24
DHG20I1200HA
DHG20I1200HA
IXYS
DIODE GEN PURP 1.2KV 20A TO247
CS60-14IO1
CS60-14IO1
IXYS
SCR 1.4KV 75A PLUS247-3
IXFP60N25X3M
IXFP60N25X3M
IXYS
MOSFET N-CH 250V 60A TO220AB
IXFT42N50P2
IXFT42N50P2
IXYS
MOSFET N-CH 500V 42A TO268
IXFX40N90P
IXFX40N90P
IXYS
MOSFET N-CH 900V 40A PLUS247-3
IXFR180N06
IXFR180N06
IXYS
MOSFET N-CH 60V 180A ISOPLUS247
IXFC36N50P
IXFC36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS220
IXFH20N60Q
IXFH20N60Q
IXYS
MOSFET N-CH 600V 20A TO247AD
IXST24N60BD1
IXST24N60BD1
IXYS
IGBT 600V 48A 150W TO268
IXGP48N60C3
IXGP48N60C3
IXYS
IGBT 600V 75A 300W TO220AB