IXFN100N20
  • Share:

IXYS IXFN100N20

Manufacturer No:
IXFN100N20
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN100N20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 100A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:23mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:380 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
473

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN100N20 IXFN120N20   IXFN180N20   IXFN106N20   IXFN100N25  
Manufacturer IXYS IXYS IXYS IXYS IXYS
Product Status Active Not For New Designs Not For New Designs Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V 250 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc) 180A (Tc) 106A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 500mA, 10V 17mOhm @ 500mA, 10V 10mOhm @ 500mA, 10V 20mOhm @ 500mA, 10V 27mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA 4V @ 8mA 4V @ 8mA 4V @ 8mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 380 nC @ 10 V 360 nC @ 10 V 660 nC @ 10 V 380 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 9100 pF @ 25 V 22000 pF @ 25 V 9000 pF @ 25 V 9100 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 520W (Tc) 600W (Tc) 700W (Tc) 521W (Tc) 600W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

HUFA76409D3S
HUFA76409D3S
Fairchild Semiconductor
MOSFET N-CH 60V 18A TO252AA
SSM3K36MFV,L3F
SSM3K36MFV,L3F
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 500MA VESM
IRFR020TRPBF
IRFR020TRPBF
Vishay Siliconix
MOSFET N-CH 60V 14A DPAK
DMP6023LSS-13
DMP6023LSS-13
Diodes Incorporated
MOSFET P-CH 60V 6.6A 8SO
SBSS84LT1G
SBSS84LT1G
onsemi
MOSFET P-CH 50V 130MA SOT23-3
IRF1404ZSTRLPBF
IRF1404ZSTRLPBF
Infineon Technologies
MOSFET N-CH 40V 180A D2PAK
TK7A90E,S4X
TK7A90E,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 7A TO220SIS
IRFU9010PBF
IRFU9010PBF
Vishay Siliconix
MOSFET P-CH 50V 5.3A TO251AA
RM5N800LD
RM5N800LD
Rectron USA
MOSFET N-CHANNEL 800V 5A TO252-2
IAUC100N04S6N015ATMA1
IAUC100N04S6N015ATMA1
Infineon Technologies
IAUC100N04S6N015ATMA1
IRF3708STRL
IRF3708STRL
Infineon Technologies
MOSFET N-CH 30V 62A D2PAK
BMS4003
BMS4003
onsemi
MOSFET N-CH 100V 18A TO220ML

Related Product By Brand

DSEC30-12A
DSEC30-12A
IXYS
DIODE ARRAY GP 1200V 15A TO247AD
DHG10I1200PA
DHG10I1200PA
IXYS
DIODE GEN PURP 1.2KV 10A TO220AC
MCC26-12IO1B
MCC26-12IO1B
IXYS
MOD THYRISTOR DUAL 1200V TO240AA
IXTT440N04T4HV
IXTT440N04T4HV
IXYS
MOSFET N-CH 40V 440A TO268
IXTA130N15X4-7
IXTA130N15X4-7
IXYS
MOSFET N-CH 150V 130A TO263-7
IXFT36N60P
IXFT36N60P
IXYS
MOSFET N-CH 600V 36A TO268
IXFR36N50P
IXFR36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS247
IXFL210N30P3
IXFL210N30P3
IXYS
MOSFET N-CH 300V 108A ISOPLUS264
IXFC60N20
IXFC60N20
IXYS
MOSFET N-CH 200V 60A ISOPLUS220
IXST15N120BD1
IXST15N120BD1
IXYS
IGBT 1200V 30A 150W TO268
IXGT31N60D1
IXGT31N60D1
IXYS
IGBT 600V 60A 150W TO268
IXGF25N300
IXGF25N300
IXYS
IGBT 3000V 27A 114W I4-PAK