IXFN100N10S3
  • Share:

IXYS IXFN100N10S3

Manufacturer No:
IXFN100N10S3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFN100N10S3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 100A SOT-227B
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:SOT-227B
Package / Case:SOT-227-4, miniBLOC
0 Remaining View Similar

In Stock

-
62

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFN100N10S3 IXFN100N10S1   IXFN100N10S2  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 500mA, 10V 15mOhm @ 500mA, 10V 15mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V 4500 pF @ 25 V 4500 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 360W (Tc) 360W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package SOT-227B SOT-227B SOT-227B
Package / Case SOT-227-4, miniBLOC SOT-227-4, miniBLOC SOT-227-4, miniBLOC

Related Product By Categories

DMN3016LSS-13
DMN3016LSS-13
Diodes Incorporated
MOSFET N-CH 30V 10.3A 8SO
SIHG73N60AEL-GE3
SIHG73N60AEL-GE3
Vishay Siliconix
MOSFET N-CH 600V 69A TO247AC
FDC638P
FDC638P
onsemi
MOSFET P-CH 20V 4.5A SUPERSOT6
IPI126N10N3G
IPI126N10N3G
Infineon Technologies
N-CHANNEL POWER MOSFET
PMN50EPEX
PMN50EPEX
Nexperia USA Inc.
MOSFET P-CH 30V 4.6A 6TSOP
FQB4N25TM
FQB4N25TM
onsemi
MOSFET N-CH 250V 3.6A D2PAK
IXTP27N20T
IXTP27N20T
IXYS
MOSFET N-CH 200V 27A TO220AB
PH7030AL,115
PH7030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 76A LFPAK56
SI7392ADP-T1-GE3
SI7392ADP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 30A PPAK SO-8
SUD25N04-25-E3
SUD25N04-25-E3
Vishay Siliconix
MOSFET N-CH 40V 25A TO252
NP32N055SLE-E1-AY
NP32N055SLE-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 55V 32A TO252
TP2424N8-G
TP2424N8-G
Microchip Technology
MOSFET P-CH 240V 316MA TO243AA

Related Product By Brand

DMA30IM1600PZ-TRL
DMA30IM1600PZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
IXTX40P50P
IXTX40P50P
IXYS
MOSFET P-CH 500V 40A PLUS247-3
IXFT70N20Q3
IXFT70N20Q3
IXYS
MOSFET N-CH 200V 70A TO268
IXFE55N50
IXFE55N50
IXYS
MOSFET N-CH 500V 47A SOT-227B
IXBT2N250
IXBT2N250
IXYS
IGBT 2500V 5A 32W TO268
IXXX110N65B4H1
IXXX110N65B4H1
IXYS
IGBT 650V 240A 880W PLUS247
IXA37IF1200HJ
IXA37IF1200HJ
IXYS
IGBT 1200V 58A 195W TO247
IXGT2N250
IXGT2N250
IXYS
IGBT 2500V 5.5A 32W TO-268
IXGA8N100
IXGA8N100
IXYS
IGBT 1000V 16A 54W TO263
IXGT16N170AH1
IXGT16N170AH1
IXYS
IGBT 1700V 16A 190W TO268
IXGH34N60B2
IXGH34N60B2
IXYS
IGBT 600V 70A 190W TO247AD
IXDF504SIA
IXDF504SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC