IXFL38N100P
  • Share:

IXYS IXFL38N100P

Manufacturer No:
IXFL38N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFL38N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 29A I5PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:24000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUSi5-Pak™
Package / Case:ISOPLUSi5-Pak™
0 Remaining View Similar

In Stock

$31.06
20

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFL38N100P IXFN38N100P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 19A, 10V 210mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 10 V 350 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 24000 pF @ 25 V 24000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 1000W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package ISOPLUSi5-Pak™ SOT-227B
Package / Case ISOPLUSi5-Pak™ SOT-227-4, miniBLOC

Related Product By Categories

TSM70N380CH C5G
TSM70N380CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 700V 11A TO251
FQD3N60CTM-WS
FQD3N60CTM-WS
onsemi
MOSFET N-CH 600V 2.4A DPAK
STP20NM60FD
STP20NM60FD
STMicroelectronics
MOSFET N-CH 600V 20A TO220AB
IXTA50N25T
IXTA50N25T
IXYS
MOSFET N-CH 250V 50A TO263
NTMS7N03R2
NTMS7N03R2
onsemi
MOSFET N-CH 30V 4.8A 8SOIC
NTD32N06L-001
NTD32N06L-001
onsemi
MOSFET N-CH 60V 32A IPAK
VN10LPSTOA
VN10LPSTOA
Diodes Incorporated
MOSFET N-CH 60V 270MA E-LINE
IXFR13N50
IXFR13N50
IXYS
MOSFET N-CH 500V 13A ISOPLUS247
2SJ649-AZ
2SJ649-AZ
Renesas Electronics America Inc
MOSFET P-CH 60V 20A TO220
2SK2034TE85LF
2SK2034TE85LF
Toshiba Semiconductor and Storage
MOSFET N-CH 20V 100MA SC70
MCU12P10-TP
MCU12P10-TP
Micro Commercial Co
MOSFET P-CH 100V 12A DPAK
BUK9516-75B,127
BUK9516-75B,127
NXP USA Inc.
MOSFET N-CH 75V 67A TO220AB

Related Product By Brand

DAA10P1800PZ-TRL
DAA10P1800PZ-TRL
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSS16-01AS-TUB
DSS16-01AS-TUB
IXYS
DIODE SCHOTTKY 100V 16A TO263AB
MCC44-08IO8B
MCC44-08IO8B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
CLA20EF1200PB
CLA20EF1200PB
IXYS
SCR 1.2KV 35MA TO220
IXTA64N10L2
IXTA64N10L2
IXYS
MOSFET N-CH 100V 64A TO263AA
IXFK34N80
IXFK34N80
IXYS
MOSFET N-CH 800V 34A TO-264AA
MMIX1F360N15T2
MMIX1F360N15T2
IXYS
MOSFET N-CH 150V 235A 24SMPD
IXTH72N30T
IXTH72N30T
IXYS
MOSFET N-CH 300V 72A TO247
IXBH42N170
IXBH42N170
IXYS
IGBT 1700V 80A 360W TO247
IXGC12N60C
IXGC12N60C
IXYS
IGBT 600V 15A 85W ISOPLUS220
IXGX35N120B
IXGX35N120B
IXYS
IGBT 1200V 70A 350W PLUS247
IXGF30N400
IXGF30N400
IXYS
IGBT 4000V 30A 160W I4-PAK