IXFL210N30P3
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IXYS IXFL210N30P3

Manufacturer No:
IXFL210N30P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFL210N30P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 108A ISOPLUS264
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:108A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 105A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:268 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:ISOPLUS264™
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFL210N30P3 IXFN210N30P3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 108A (Tc) 192A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 105A, 10V 14.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 268 nC @ 10 V 268 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16200 pF @ 25 V 16200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 1500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Chassis Mount
Supplier Device Package ISOPLUS264™ SOT-227B
Package / Case TO-264-3, TO-264AA SOT-227-4, miniBLOC

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