IXFK98N50P3
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IXYS IXFK98N50P3

Manufacturer No:
IXFK98N50P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK98N50P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 98A TO264AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:197 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:13100 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK98N50P3 IXFK78N50P3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc) 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 500mA, 10V 68mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V 147 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 13100 pF @ 25 V 9900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1300W (Tc) 1130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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