IXFK88N20Q
  • Share:

IXYS IXFK88N20Q

Manufacturer No:
IXFK88N20Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK88N20Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 88A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:88A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:146 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4150 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

-
375

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFK88N20Q IXFK80N20Q  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 88A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 44A, 10V 28mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4150 pF @ 25 V 4600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

Related Product By Categories

RJK4007DPP-L1#T2
RJK4007DPP-L1#T2
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IPWS65R035CFD7AXKSA1
IPWS65R035CFD7AXKSA1
Infineon Technologies
MOSFET N-CH 650V 63A TO247-3-41
FQD6N25TM
FQD6N25TM
onsemi
MOSFET N-CH 250V 4.4A DPAK
PMV250EPEA215
PMV250EPEA215
NXP USA Inc.
P-CHANNEL MOSFET
BSS138BKW/DG/B2135
BSS138BKW/DG/B2135
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STP13NM60N
STP13NM60N
STMicroelectronics
MOSFET N-CH 600V 11A TO220-3
IPB50R199CPATMA1
IPB50R199CPATMA1
Infineon Technologies
MOSFET N-CH 550V 17A TO263-3
IRF9610
IRF9610
Vishay Siliconix
MOSFET P-CH 200V 1.8A TO220AB
IRF3515S
IRF3515S
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
FQP32N20C_F080
FQP32N20C_F080
onsemi
MOSFET N-CH 200V 28A TO220-3
STH185N10F3-2
STH185N10F3-2
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-2
NVMFS5C430NT1G
NVMFS5C430NT1G
onsemi
MOSFET N-CH 40V 5DFN

Related Product By Brand

DSA70C100HB
DSA70C100HB
IXYS
DIODE ARRAY SCHOTTKY 100V TO247
DGSK20-025AS-TUB
DGSK20-025AS-TUB
IXYS
DIODE ARRAY SCHOTTKY 250V TO263
DSEP30-12AR
DSEP30-12AR
IXYS
DIODE GP 1.2KV 30A ISOPLUS247
DGS3-030AS
DGS3-030AS
IXYS
DIODE SCHOTTKY 300V 5A TO252AA
MCC95-16IO1B
MCC95-16IO1B
IXYS
THYRISTOR MODULE 1600V 2X116A
IXTA50N20P
IXTA50N20P
IXYS
MOSFET N-CH 200V 50A TO263
IXTK90P20P
IXTK90P20P
IXYS
MOSFET P-CH 200V 90A TO264
IXTH130N20T
IXTH130N20T
IXYS
MOSFET N-CH 200V 130A TO247
IXTP12N65X2
IXTP12N65X2
IXYS
MOSFET N-CH 650V 12A TO220
IXFQ24N50P2
IXFQ24N50P2
IXYS
MOSFET N-CH 500V 24A TO3P
IXYH40N120B3
IXYH40N120B3
IXYS
IGBT 1200V 96A 577W TO247
IXYH12N250CV1HV
IXYH12N250CV1HV
IXYS
IGBT 2500V 28A TO247HV