IXFK64N50Q3
  • Share:

IXYS IXFK64N50Q3

Manufacturer No:
IXFK64N50Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK64N50Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 64A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1000W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

$27.85
8

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFK64N50Q3 IXFK64N60Q3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 95mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6950 pF @ 25 V 9930 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1000W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

Related Product By Categories

BSS192,115
BSS192,115
Nexperia USA Inc.
MOSFET P-CH 240V 200MA SOT89
IPD80P03P4L07ATMA2
IPD80P03P4L07ATMA2
Infineon Technologies
MOSFET P-CH 30V 80A TO252-31
CSD18509Q5BT
CSD18509Q5BT
Texas Instruments
MOSFET N-CH 40V 100A 8VSON
IRF6215STRLPBF
IRF6215STRLPBF
Infineon Technologies
MOSFET P-CH 150V 13A D2PAK
SI7148DP-T1-GE3
SI7148DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 75V 28A PPAK SO-8
PJW3P06A_R2_00001
PJW3P06A_R2_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
IPB120N04S302ATMA1
IPB120N04S302ATMA1
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFIBC30G
IRFIBC30G
Vishay Siliconix
MOSFET N-CH 600V 2.5A TO220-3
SI1058X-T1-E3
SI1058X-T1-E3
Vishay Siliconix
MOSFET N-CH 20V 1.3A SC89-6
SIA443DJ-T1-GE3
SIA443DJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 9A PPAK SC70-6
SIB419DK-T1-GE3
SIB419DK-T1-GE3
Vishay Siliconix
MOSFET P-CH 12V 9A PPAK SC75-6
2SK4016(Q)
2SK4016(Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 13A TO220SIS

Related Product By Brand

DSEP2X31-03A
DSEP2X31-03A
IXYS
DIODE MODULE 300V 30A SOT227B
MCC19-08IO1B
MCC19-08IO1B
IXYS
MOD THYRISTOR DUAL 800V TO-240AA
IXTH10P60
IXTH10P60
IXYS
MOSFET P-CH 600V 10A TO247
IXTH44P15T
IXTH44P15T
IXYS
MOSFET P-CH 150V 44A TO247
IXTP20N65XM
IXTP20N65XM
IXYS
MOSFET N-CH 650V 9A TO220
IXFT60N50P3
IXFT60N50P3
IXYS
MOSFET N-CH 500V 60A TO268
IXFH10N90
IXFH10N90
IXYS
MOSFET N-CH 900V 10A TO247AD
IXTP160N085T
IXTP160N085T
IXYS
MOSFET N-CH 85V 160A TO220AB
IXTP98N075T
IXTP98N075T
IXYS
MOSFET N-CH 75V 98A TO220AB
IXTY01N80
IXTY01N80
IXYS
MOSFET N-CH 800V 100MA TO252AA
IXYH100N65C3
IXYH100N65C3
IXYS
IGBT 650V 200A 830W TO247
IXGA20N60B
IXGA20N60B
IXYS
IGBT 600V 40A 150W TO263AA