IXFK64N50Q3
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IXYS IXFK64N50Q3

Manufacturer No:
IXFK64N50Q3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK64N50Q3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 64A TO264AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1000W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK64N50Q3 IXFK64N60Q3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 95mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 6.5V @ 4mA 6.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6950 pF @ 25 V 9930 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1000W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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