IXFK64N50P
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IXYS IXFK64N50P

Manufacturer No:
IXFK64N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK64N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 64A TO264AA
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:64A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 32A, 10V
Vgs(th) (Max) @ Id:5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:8700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):830W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK64N50P IXFK64N60P   IXFK44N50P  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc) 64A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 85mOhm @ 32A, 10V 96mOhm @ 500mA, 10V 140mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 200 nC @ 10 V 98 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 25 V 12000 pF @ 25 V 5440 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 830W (Tc) 1040W (Tc) 658W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA

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