IXFK44N55Q
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IXYS IXFK44N55Q

Manufacturer No:
IXFK44N55Q
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFK44N55Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 550V 44A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):550 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 22A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK44N55Q IXFK44N50Q  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V 500 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 22A, 10V 120mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 25 V 7000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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