IXFK360N10T
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IXYS IXFK360N10T

Manufacturer No:
IXFK360N10T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK360N10T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 360A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:360A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs:525 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:33000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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$13.44
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