IXFK32N60
  • Share:

IXYS IXFK32N60

Manufacturer No:
IXFK32N60
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK32N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 32A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:325 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

-
287

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFK32N60 IXFK36N60  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 500mA, 10V 180mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 325 nC @ 10 V 325 nC @ 25 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 25 V 9000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

Related Product By Categories

FCH072N60F
FCH072N60F
onsemi
MOSFET N-CH 600V 52A TO247-3
NTBG045N065SC1
NTBG045N065SC1
onsemi
SILICON CARBIDE MOSFET, NCHANNEL
PMPB29XPE,115
PMPB29XPE,115
Nexperia USA Inc.
MOSFET P-CH 20V 5A DFN2020MD-6
IXFH100N30X3
IXFH100N30X3
IXYS
MOSFET N-CH 300V 100A TO247
SIHF8N50D-E3
SIHF8N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 8.7A TO220
SIHP15N60E-E3
SIHP15N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 15A TO220AB
AUIRFS3006-7P
AUIRFS3006-7P
Infineon Technologies
MOSFET N-CH 60V 240A D2PAK
IRLL110PBF
IRLL110PBF
Vishay Siliconix
MOSFET N-CH 100V 1.5A SOT223
BSS209PW L6327
BSS209PW L6327
Infineon Technologies
MOSFET P-CH 20V 580MA SOT323-3
IXFP5N50P3
IXFP5N50P3
IXYS
MOSFET N-CH 500V 5A TO220AB
NVD5805NT4G
NVD5805NT4G
onsemi
MOSFET N-CH 40V 51A DPAK
PMPB100ENEAX
PMPB100ENEAX
Nexperia USA Inc.
PMPB100ENEA/SOT1220/SOT1220

Related Product By Brand

DSSK50-01A
DSSK50-01A
IXYS
DIODE ARRAY SCHOTTKY 100V TO247
DS17-08A
DS17-08A
IXYS
DIODE AVALANCHE 800V 25A DO203AA
DSAI35-16A
DSAI35-16A
IXYS
DIODE AVALANCHE 1.6KV 49A DO203
MMO62-12IO6
MMO62-12IO6
IXYS
MODULE AC CTLR 1200V SOT-227B
CS35-14IO4
CS35-14IO4
IXYS
SCR 1.4KV 120A TO208AC
CLA40MT1200NPZ-TRL
CLA40MT1200NPZ-TRL
IXYS
THYRISTOR PHASE THRU TO263
IXTP220N04T2
IXTP220N04T2
IXYS
MOSFET N-CH 40V 220A TO220AB
IXTH32P20T
IXTH32P20T
IXYS
MOSFET P-CH 200V 32A TO247
IXFK90N30
IXFK90N30
IXYS
MOSFET N-CH 300V 90A TO-264
IXYH24N170C
IXYH24N170C
IXYS
IGBT 1.7KV 58A TO247-3
IXYY8N90C3
IXYY8N90C3
IXYS
IGBT 900V 20A 125W C3 TO-252
IXGR40N60C2G1
IXGR40N60C2G1
IXYS
IGBT 600V ISOPLUS247