IXFK32N100P
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IXYS IXFK32N100P

Manufacturer No:
IXFK32N100P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK32N100P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 32A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:225 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:14200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):960W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK32N100P IXFK32N100X  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V 220mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 225 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 25 V 4075 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 960W (Tc) 890W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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