IXFK250N10P
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IXYS IXFK250N10P

Manufacturer No:
IXFK250N10P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK250N10P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 250A TO264AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:250A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:205 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:16000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK250N10P IXFK200N10P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 250A (Tc) 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 50A, 10V 7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 205 nC @ 10 V 235 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 25 V 7600 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1250W (Tc) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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