IXFK21N100Q
  • Share:

IXYS IXFK21N100Q

Manufacturer No:
IXFK21N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK21N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 21A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

-
342

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFK21N100Q IXFK21N100F  
Manufacturer IXYS IXYS
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 10.5A, 10V 500mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V 5500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 500W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

Related Product By Categories

TPCA8052-H(T2L1,VM
TPCA8052-H(T2L1,VM
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 20A 8SOP
IRFP360PBF
IRFP360PBF
Vishay Siliconix
MOSFET N-CH 400V 23A TO247-3
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
SCT20N120H
SCT20N120H
STMicroelectronics
SICFET N-CH 1200V 20A H2PAK-2
RJK0331DPB-01#J0
RJK0331DPB-01#J0
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
STY140NS10
STY140NS10
STMicroelectronics
MOSFET N-CH 100V 140A MAX247
IRFZ34E
IRFZ34E
Infineon Technologies
MOSFET N-CH 60V 28A TO220AB
IRFBF30S
IRFBF30S
Vishay Siliconix
MOSFET N-CH 900V 3.6A D2PAK
ZVN4306AVSTOB
ZVN4306AVSTOB
Diodes Incorporated
MOSFET N-CH 60V 1.1A E-LINE
IXTK75N30
IXTK75N30
IXYS
MOSFET N-CH 300V 75A TO264
STD24N06LT4G
STD24N06LT4G
onsemi
MOSFET N-CH 60V 24A DPAK
IRF200S234
IRF200S234
Infineon Technologies
MOSFET N-CH 200V 90A D2PAK

Related Product By Brand

MCD56-16IO8B
MCD56-16IO8B
IXYS
MOD THYRISTOR/DIO 1600V TO-240AA
MCD95-14IO8B
MCD95-14IO8B
IXYS
MOD THYRISTOR/DIO 1400V TO-240AA
IXFB110N60P3
IXFB110N60P3
IXYS
MOSFET N-CH 600V 110A PLUS264
IXTA36N30P
IXTA36N30P
IXYS
MOSFET N-CH 300V 36A TO263
IXFA130N15X3
IXFA130N15X3
IXYS
MOSFET N-CH 150V 130A TO263AA
IXTQ86N20T
IXTQ86N20T
IXYS
MOSFET N-CH 200V 86A TO3P
IXFH18N60X
IXFH18N60X
IXYS
MOSFET N-CH 600V 18A TO247
IXFH120N25T
IXFH120N25T
IXYS
MOSFET N-CH 250V 120A TO247AD
IXCP01N90E
IXCP01N90E
IXYS
MOSFET N-CH 900V 250MA TO220AB
IXGH16N170
IXGH16N170
IXYS
IGBT 1700V 32A 190W TO247AD
IXGH40N60B2
IXGH40N60B2
IXYS
IGBT 600V 75A 300W TO247
IXG611S1
IXG611S1
IXYS
IC GATE DRVR MOSF/IGBT 8SOIC