IXFK160N30T
  • Share:

IXYS IXFK160N30T

Manufacturer No:
IXFK160N30T
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK160N30T Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 160A TO264AA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:19mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs:335 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1390W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
0 Remaining View Similar

In Stock

$19.26
6

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFK160N30T IXFK120N30T  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 60A, 10V 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 335 nC @ 10 V 265 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 28000 pF @ 25 V 20000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1390W (Tc) 960W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

Related Product By Categories

IRF60B217
IRF60B217
Infineon Technologies
MOSFET N-CH 60V 60A TO220AB
IXTN22N100L
IXTN22N100L
IXYS
MOSFET N-CH 1000V 22A SOT227B
BSP296NH6327XTSA1
BSP296NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 1.2A SOT223-4
SQ4850EY-T1_GE3
SQ4850EY-T1_GE3
Vishay Siliconix
MOSFET N-CH 60V 12A 8SO
IPB054N06N3GATMA1
IPB054N06N3GATMA1
Infineon Technologies
MOSFET N-CH 60V 80A D2PAK
TPW4R50ANH,L1Q
TPW4R50ANH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 100V 92A 8DSOP
NVB190N65S3F
NVB190N65S3F
onsemi
MOSFET N-CH 650V 20A D2PAK-3
RJK0332DPB-00#J0
RJK0332DPB-00#J0
Renesas Electronics America Inc
MOSFET N-CH 30V 35A LFPAK
SQM120N10-09_GE3
SQM120N10-09_GE3
Vishay Siliconix
MOSFET N-CH 100V 120A TO263
IXFH32N50
IXFH32N50
IXYS
MOSFET N-CH 500V 32A TO247AD
IRF6713STR1PBF
IRF6713STR1PBF
Infineon Technologies
MOSFET N-CH 25V 22A DIRECTFET
RSS060P05HZGTB
RSS060P05HZGTB
Rohm Semiconductor
PCH -45V -6A POWER MOSFET: RSS06

Related Product By Brand

DSA30C200PB
DSA30C200PB
IXYS
DIODE ARRAY SCHOTTKY 200V TO220
IXTH10P50P
IXTH10P50P
IXYS
MOSFET P-CH 500V 10A TO247
IXFH36N60X3
IXFH36N60X3
IXYS
MOSFET ULTRA JCT 600V 36A TO247
IXFP4N85X
IXFP4N85X
IXYS
MOSFET N-CH 850V 3.5A TO220AB
IXFN60N60
IXFN60N60
IXYS
MOSFET N-CH 600V 60A SOT-227B
IXXH80N65B4
IXXH80N65B4
IXYS
IGBT 650V 160A 625W TO247AD
IXA55I1200HJ
IXA55I1200HJ
IXYS
IGBT 1200V 84A 290W TO247
IXDR35N60BD1
IXDR35N60BD1
IXYS
IGBT 600V 38A 125W ISOPLUS247
IXGX100N160A
IXGX100N160A
IXYS
IGBT TO247
IXCY02M45A
IXCY02M45A
IXYS
IC CURRENT REGULATOR DPAK
IXDD409YI
IXDD409YI
IXYS
IC GATE DRVR LOW-SIDE TO263
IXJ611P1
IXJ611P1
IXYS
IC GATE DRVR HALF BRIDGE 8DIP