IXFK150N15P
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IXYS IXFK150N15P

Manufacturer No:
IXFK150N15P
Manufacturer:
IXYS
Package:
Box
Datasheet:
IXFK150N15P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 150A TO264AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:150A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):714W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK150N15P IXFK180N15P   IXFK150N15  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc) 180A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 13mOhm @ 500mA, 10V 11mOhm @ 90A, 10V 12.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V 240 nC @ 10 V 360 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V 7000 pF @ 25 V 9100 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 714W (Tc) 830W (Tc) 560W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA TO-264-3, TO-264AA

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