IXFK120N30P3
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IXYS IXFK120N30P3

Manufacturer No:
IXFK120N30P3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK120N30P3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 120A TO264AA
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:27mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8630 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264AA (IXFK)
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK120N30P3 IXFK150N30P3  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 60A, 10V 19mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 197 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8630 pF @ 25 V 12100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1130W (Tc) 1300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264AA (IXFK) TO-264AA (IXFK)
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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