IXFK100N65X2
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IXYS IXFK100N65X2

Manufacturer No:
IXFK100N65X2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFK100N65X2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 100A TO264
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:30mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:11300 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1040W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-264
Package / Case:TO-264-3, TO-264AA
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Similar Products

Part Number IXFK100N65X2 IXFK120N65X2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 10V 24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 225 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V 15500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1040W (Tc) 1250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-264 TO-264AA
Package / Case TO-264-3, TO-264AA TO-264-3, TO-264AA

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