IXFJ40N30
  • Share:

IXYS IXFJ40N30

Manufacturer No:
IXFJ40N30
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFJ40N30 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 40A TO268
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-268
Package / Case:TO-220-3, Short Tab
0 Remaining View Similar

In Stock

-
149

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFJ40N30 IXFJ40N30Q   IXFH40N30  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 20A, 10V 80mOhm @ 20A, 10V 85mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 4800 pF @ 25 V 4800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-268 TO-268 TO-247AD (IXFH)
Package / Case TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

Related Product By Categories

IRF3415STRLPBF
IRF3415STRLPBF
Infineon Technologies
MOSFET N-CH 150V 43A D2PAK
IPD30N06S2L23ATMA3
IPD30N06S2L23ATMA3
Infineon Technologies
MOSFET N-CH 55V 30A TO252-31
APT28M120B2
APT28M120B2
Microchip Technology
MOSFET N-CH 1200V 29A T-MAX
PJQ2461_R1_00001
PJQ2461_R1_00001
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
NTMFS4C09NAT1G
NTMFS4C09NAT1G
onsemi
MOSFET N-CH 30V 9A/52A 5DFN
IXTP42N15T
IXTP42N15T
IXYS
MOSFET N-CH 150V 42A TO220AB
YJQ35N04A-F1-1100HF
YJQ35N04A-F1-1100HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 40V 35A DFN3333-8L
IRL2505L
IRL2505L
Infineon Technologies
MOSFET N-CH 55V 104A TO262
FDMA520PZ
FDMA520PZ
onsemi
MOSFET P-CH 20V 7.3A 6MICROFET
IXFH88N20Q
IXFH88N20Q
IXYS
MOSFET N-CH 200V 88A TO247AD
AOT416
AOT416
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 4.7A/42A TO220
NTLUS4C16NTAG
NTLUS4C16NTAG
onsemi
MOSFET N-CH 30V 9.4A 6UDFN

Related Product By Brand

VUO125-12NO7
VUO125-12NO7
IXYS
BRIDGE RECT 3P 1.2KV 166A PWS-C
IXTP12N50P
IXTP12N50P
IXYS
MOSFET N-CH 500V 12A TO220AB
IXTX17N120L
IXTX17N120L
IXYS
MOSFET N-CH 1200V 17A PLUS247-3
IXFH12N90
IXFH12N90
IXYS
MOSFET N-CH 900V 12A TO247AD
IXTH75N15
IXTH75N15
IXYS
MOSFET N-CH 150V 75A TO247
IXTV96N25T
IXTV96N25T
IXYS
MOSFET N-CH 250V 96A PLUS220
IXBT6N170
IXBT6N170
IXYS
IGBT 1700V 12A 75W TO268
IXXH50N60C3D1
IXXH50N60C3D1
IXYS
IGBT 600V 100A 600W TO247AD
IXYN300N65A3
IXYN300N65A3
IXYS
DISC IGBT XPT-GENX3 SOT-227B(MIN
IXGR48N60B3D4A
IXGR48N60B3D4A
IXYS
IGBT 600V ISOPLUS247
IXDD404SIA-16
IXDD404SIA-16
IXYS
IC GATE DRVR LOW-SIDE 16SOIC
IXI859S1
IXI859S1
IXYS
IC REG CONV MICRO CTR 1OUT 8SOIC