IXFJ40N30
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IXYS IXFJ40N30

Manufacturer No:
IXFJ40N30
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFJ40N30 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 40A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:80mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:200 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-268
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXFJ40N30 IXFJ40N30Q   IXFH40N30  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 20A, 10V 80mOhm @ 20A, 10V 85mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 4800 pF @ 25 V 4800 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-268 TO-268 TO-247AD (IXFH)
Package / Case TO-220-3, Short Tab TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-247-3

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