IXFJ32N50Q
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IXYS IXFJ32N50Q

Manufacturer No:
IXFJ32N50Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFJ32N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 32A TO268
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:153 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-268
Package / Case:TO-220-3, Short Tab
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Similar Products

Part Number IXFJ32N50Q IXFK32N50Q   IXFH32N50Q  
Manufacturer IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc) 32A (Tc) 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 16A, 10V 160mOhm @ 16A, 10V 160mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V 150 nC @ 10 V 190 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3950 pF @ 25 V 3950 pF @ 25 V 4925 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360W (Tc) 416W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-268 TO-264AA (IXFK) TO-247AD (IXFH)
Package / Case TO-220-3, Short Tab TO-264-3, TO-264AA TO-247-3

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