IXFH80N10
  • Share:

IXYS IXFH80N10

Manufacturer No:
IXFH80N10
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH80N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 80A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
259

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH80N10 IXFH80N10Q  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 40A, 10V 15mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4800 pF @ 25 V 4500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

C3M0075120D
C3M0075120D
Wolfspeed, Inc.
SICFET N-CH 1200V 30A TO247-3
IXTP60N10T
IXTP60N10T
IXYS
MOSFET N-CH 100V 60A TO220AB
IPLK70R750P7ATMA1
IPLK70R750P7ATMA1
Infineon Technologies
MOSFET N-CH 700V TDSON-8
FCP125N65S3
FCP125N65S3
onsemi
MOSFET N-CH 650V 24A TO220-3
TK28N65W,S1F
TK28N65W,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 27.6A TO247
IRLMS4502TR
IRLMS4502TR
Infineon Technologies
MOSFET P-CH 12V 5.5A MICRO6
IRF3709
IRF3709
Infineon Technologies
MOSFET N-CH 30V 90A TO220AB
IXTV250N075TS
IXTV250N075TS
IXYS
MOSFET N-CH 75V 250A PLUS-220SMD
NP88N055KUG-E1-AY
NP88N055KUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 55V 88A TO263
RJK0602DPN-E0#T2
RJK0602DPN-E0#T2
Renesas Electronics America Inc
MOSFET N-CH 60V 110A TO220AB
2N6796
2N6796
Microsemi Corporation
MOSFET N-CH 100V 8A TO39
RD3P08BBDTL
RD3P08BBDTL
Rohm Semiconductor
MOSFET N-CH 100V 80A TO252

Related Product By Brand

VBE17-12NO7
VBE17-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 19A ECOPAC1
MCC250-14IO1
MCC250-14IO1
IXYS
THYRISTOR DUAL 1400V 450A
VMK165-007T
VMK165-007T
IXYS
MOSFET 2N-CH 70V 165A TO-240AA
IXFT50N85XHV
IXFT50N85XHV
IXYS
MOSFET N-CH 850V 50A TO268
IXTX400N15X4
IXTX400N15X4
IXYS
MOSFET N-CH 150V 400A PLUS247
MMIX1T600N04T2
MMIX1T600N04T2
IXYS
MOSFET N-CH 40V 600A 24SMPD
IXTH1N250
IXTH1N250
IXYS
MOSFET N-CH 2500V 1.5A TO-247AD
IXTA240N055T7
IXTA240N055T7
IXYS
MOSFET N-CH 55V 240A TO263-7
IXTK250N10
IXTK250N10
IXYS
MOSFET N-CH 100V 250A TO264
IXSK80N60B
IXSK80N60B
IXYS
IGBT 600V 160A 500W TO264
IXBF12N300
IXBF12N300
IXYS
IGBT 3000V 26A 125W ISOPLUSI4
IXBD4411PI
IXBD4411PI
IXYS
IC GATE DRVR HIGH-SIDE 16DIP