IXFH80N06
  • Share:

IXYS IXFH80N06

Manufacturer No:
IXFH80N06
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH80N06 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
363

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH80N06 IXFH80N08  
Manufacturer IXYS IXYS
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs - 9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id - 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs - 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 4800 pF @ 25 V
FET Feature - -
Power Dissipation (Max) - 300W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BUK9245-55A,118
BUK9245-55A,118
NXP USA Inc.
TRANSISTOR >30MHZ
IRFR430BTF
IRFR430BTF
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
APT10M11LVRG
APT10M11LVRG
Microchip Technology
MOSFET N-CH 100V 100A TO264
PMV164ENEAR
PMV164ENEAR
Nexperia USA Inc.
MOSFET N-CH 60V 1.6A TO236AB
BSZ088N03LSGATMA1
BSZ088N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 12A/40A 8TSDSON
DMN3026LVTQ-13
DMN3026LVTQ-13
Diodes Incorporated
MOSFET N-CH 30V 6.6A TSOT26
FQA36P15_F109
FQA36P15_F109
onsemi
MOSFET P-CH 150V 36A TO3PN
TPC8110(TE12L,Q,M)
TPC8110(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET P-CH 40V 8A 8SOP
IPI80N06S2L05AKSA1
IPI80N06S2L05AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
AOC2423
AOC2423
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 20V 2A 4ALPHADFN
STH52N10LF3-2AG
STH52N10LF3-2AG
STMicroelectronics
MOSFET N-CH 100V 52A H2PAK-2
SCT4036KW7HRTL
SCT4036KW7HRTL
Rohm Semiconductor
1200V, 40A, 7-PIN SMD, TRENCH-ST

Related Product By Brand

DPG20C300PB
DPG20C300PB
IXYS
DIODE ARRAY GP 300V 10A TO220AB
MCD40-16IO6
MCD40-16IO6
IXYS
MOD THYRISTOR/DIO 1600V SOT-227B
VVZ110-14IO7
VVZ110-14IO7
IXYS
RECT BRIDGE 3PH 110A 1400V PWSE2
IXFH50N60P3
IXFH50N60P3
IXYS
MOSFET N-CH 600V 50A TO247AD
IXTA60N20X4
IXTA60N20X4
IXYS
MOSFET ULTRA X4 200V 60A TO-263
IXTY02N120P
IXTY02N120P
IXYS
MOSFET N-CH 1200V 200MA TO252
IXFH60N20
IXFH60N20
IXYS
MOSFET N-CH 200V 60A TO247AD
IXTC102N25T
IXTC102N25T
IXYS
MOSFET N-CH 250V ISOPLUS220
IXXX160N65B4
IXXX160N65B4
IXYS
IGBT 650V 310A 940W PLUS247
IXYK100N120C3
IXYK100N120C3
IXYS
IGBT 1200V 188A 1150W TO264
IXXX300N60C3
IXXX300N60C3
IXYS
IGBT 600V 510A 2300W TO247
IXGH41N60
IXGH41N60
IXYS
IGBT 600V 76A 200W TO247AD