IXFH75N10Q
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IXYS IXFH75N10Q

Manufacturer No:
IXFH75N10Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH75N10Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 75A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH75N10Q IXFH75N10  
Manufacturer IXYS IXYS
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 37.5A, 10V 20mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V 260 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V 4500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

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