IXFH6N100F
  • Share:

IXYS IXFH6N100F

Manufacturer No:
IXFH6N100F
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH6N100F Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 6A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
169

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH6N100F IXFH6N100Q   IXFH6N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V 1.9Ohm @ 3A, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 4.5V @ 2.5mA 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 48 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V 2200 pF @ 25 V 2600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 180W (Tc) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

BSZ097N10NS5ATMA1
BSZ097N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 8A/40A TSDSON
MSC40SM120JCU2
MSC40SM120JCU2
Microchip Technology
SICFET N-CH 1.2KV 55A SOT227
IPDD60R080G7XTMA1
IPDD60R080G7XTMA1
Infineon Technologies
MOSFET N-CH 600V 29A HDSOP-10
NVTYS006N06CLTWG
NVTYS006N06CLTWG
onsemi
T6 60V N-CH LL IN LFPAK33
TN0104N3-G-P014
TN0104N3-G-P014
Microchip Technology
MOSFET N-CH 40V 450MA TO92-3
YJL3404A-F2-0000HF
YJL3404A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 30V 5.6A SOT-23-3L
25P06
25P06
Goford Semiconductor
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
STP50NE08
STP50NE08
STMicroelectronics
MOSFET N-CH 80V 50A TO220AB
IRF7807D2PBF
IRF7807D2PBF
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
IPS05N03LA G
IPS05N03LA G
Infineon Technologies
MOSFET N-CH 25V 50A TO251-3
2SK2962,T6F(J
2SK2962,T6F(J
Toshiba Semiconductor and Storage
MOSFET N-CH TO92MOD
PHD21N06LT,118
PHD21N06LT,118
NXP USA Inc.
MOSFET N-CH 55V 19A DPAK

Related Product By Brand

VUO190-08NO7
VUO190-08NO7
IXYS
BRIDGE RECT 3P 800V 248A PWS-E1
DSSK20-0045AM
DSSK20-0045AM
IXYS
DIODE ARRAY SCHOTTKY 45V TO220
IXFT220N20X3HV
IXFT220N20X3HV
IXYS
MOSFET N-CH 200V 220A TO268HV
IXFN240N15T2
IXFN240N15T2
IXYS
MOSFET N-CH 150V 240A SOT227B
IXFH12N90
IXFH12N90
IXYS
MOSFET N-CH 900V 12A TO247AD
IXTH16P20
IXTH16P20
IXYS
MOSFET P-CH 200V 16A TO247
IXUN350N10
IXUN350N10
IXYS
MOSFET N-CH 100V 350A SOT-227B
IXGT6N170
IXGT6N170
IXYS
IGBT 1700V 12A 75W TO268
IXGH32N60BU1
IXGH32N60BU1
IXYS
IGBT 600V 60A 200W TO247AD
IXGR60N60U1
IXGR60N60U1
IXYS
IGBT 600V 75A 300W ISOPLUS247
IXDI514SIAT/R
IXDI514SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC
IX6610T
IX6610T
IXYS
IC MOSF DRIVER