IXFH6N100F
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IXYS IXFH6N100F

Manufacturer No:
IXFH6N100F
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH6N100F Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 6A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1770 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH6N100F IXFH6N100Q   IXFH6N100  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3A, 10V 1.9Ohm @ 3A, 10V 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 4.5V @ 2.5mA 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 48 nC @ 10 V 130 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V 2200 pF @ 25 V 2600 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 180W (Tc) 180W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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