IXFH52N50P2
  • Share:

IXYS IXFH52N50P2

Manufacturer No:
IXFH52N50P2
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH52N50P2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 52A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:113 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):960W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$11.64
9

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH52N50P2 IXFH42N50P2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 26A, 10V 145mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V 92 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V 5300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 960W (Tc) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FQPF9P25
FQPF9P25
onsemi
MOSFET P-CH 250V 6A TO220F-3
TK65S04N1L,LQ
TK65S04N1L,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 65A DPAK
DMNH10H028SCT
DMNH10H028SCT
Diodes Incorporated
MOSFET N-CH 100V 60A TO220AB
SIR576DP-T1-RE3
SIR576DP-T1-RE3
Vishay Siliconix
N-CHANNEL 150 V (D-S) MOSFET POW
MMSF3P02HDR2G
MMSF3P02HDR2G
onsemi
MOSFET P-CH 20V 5.6A 8SOIC
NVTFS5C460NLWFTAG
NVTFS5C460NLWFTAG
onsemi
MOSFET N-CH 40V 19A/74A 8WDFN
PH2520U,115
PH2520U,115
Nexperia USA Inc.
MOSFET N-CH 20V 100A LFPAK56
IXKC40N60C
IXKC40N60C
IXYS
MOSFET N-CH 600V 28A ISOPLUS220
IXTN36N50
IXTN36N50
IXYS
MOSFET N-CH 500V 36A SOT227B
SI5913DC-T1-GE3
SI5913DC-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 4A 1206-8
SUD42N03-3M9P-GE3
SUD42N03-3M9P-GE3
Vishay Siliconix
MOSFET N-CH 30V 42A TO252
RRH100P03TB1
RRH100P03TB1
Rohm Semiconductor
MOSFET P-CH 30V 10A 8SOP

Related Product By Brand

MEE250-12DA
MEE250-12DA
IXYS
DIODE MODULE 1.2KV 260A Y4-M6
DAA10EM1800PZ-TUB
DAA10EM1800PZ-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
DSA300I100NA
DSA300I100NA
IXYS
DIODE SCHOTTKY 100V 300A SOT227B
IXTP2N100
IXTP2N100
IXYS
MOSFET N-CH 1000V 2A TO220AB
IXTH500N04T2
IXTH500N04T2
IXYS
MOSFET N-CH 40V 500A TO247
IXFA12N50P
IXFA12N50P
IXYS
MOSFET N-CH 500V 12A TO263
IXTT34N65X2HV
IXTT34N65X2HV
IXYS
MOSFET N-CH 650V 34A TO268HV
IXFP34N65X2M
IXFP34N65X2M
IXYS
MOSFET N-CH 650V 34A TO220
IXTH160N15T
IXTH160N15T
IXYS
MOSFET N-CH 150V 160A TO247
IXTR90P20P
IXTR90P20P
IXYS
MOSFET P-CH 200V 53A ISOPLUS247
IXTH3N200P3HV
IXTH3N200P3HV
IXYS
MOSFET N-CH 2000V 3A TO247
IXGH30N120BD1
IXGH30N120BD1
IXYS
IGBT 1200V 50A TO247