IXFH50N60X
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IXYS IXFH50N60X

Manufacturer No:
IXFH50N60X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH50N60X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 50A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:73mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:116 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):660W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH50N60X IXFH60N60X   IXFH30N60X  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 60A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 73mOhm @ 25A, 10V 55mOhm @ 30A, 10V 155mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 8mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 116 nC @ 10 V 143 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4660 pF @ 25 V 5800 pF @ 25 V 2270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 660W (Tc) 890W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247
Package / Case TO-247-3 TO-247-3 TO-247-3

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