IXFH4N100Q
  • Share:

IXYS IXFH4N100Q

Manufacturer No:
IXFH4N100Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH4N100Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 4A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
201

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH4N100Q IXFH6N100Q  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V 1.9Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 1.5mA 4.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 48 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V 2200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

Related Product By Categories

AO4419
AO4419
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 9.7A 8SOIC
RJK0390DPA-00#J5A
RJK0390DPA-00#J5A
Renesas Electronics America Inc
MOSFET N-CH 30V 65A 8WPAK
SSM6K341NU,LF
SSM6K341NU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 6A 6UDFNB
BUK765R0-100E,118
BUK765R0-100E,118
Nexperia USA Inc.
MOSFET N-CH 100V 120A D2PAK
IRFR430ATRPBF
IRFR430ATRPBF
Vishay Siliconix
MOSFET N-CH 500V 5A DPAK
NVMFS5C420NLT1G
NVMFS5C420NLT1G
onsemi
POWER MOSFET, SINGLE, N-CHANNEL,
IRLR3103
IRLR3103
Infineon Technologies
MOSFET N-CH 30V 55A DPAK
IRLZ24STRL
IRLZ24STRL
Vishay Siliconix
MOSFET N-CH 60V 17A D2PAK
AOL1428A
AOL1428A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 12.4A ULTRASO8
BUK7Y12-80EX
BUK7Y12-80EX
Nexperia USA Inc.
MOSFET N-CH 80V LFPAK56 PWR-SO8
RXH090N03TB1
RXH090N03TB1
Rohm Semiconductor
4V DRIVE NCH MOSFET: MOSFETS ARE
SCT3060ALGC11
SCT3060ALGC11
Rohm Semiconductor
SICFET N-CH 650V 39A TO247N

Related Product By Brand

DSAI35-16A
DSAI35-16A
IXYS
DIODE AVALANCHE 1.6KV 49A DO203
IXFH80N65X2
IXFH80N65X2
IXYS
MOSFET N-CH 650V 80A TO247
IXTP32P05T
IXTP32P05T
IXYS
MOSFET P-CH 50V 32A TO220AB
IXTH7P50
IXTH7P50
IXYS
MOSFET P-CH 500V 7A TO247
IXTX17N120L
IXTX17N120L
IXYS
MOSFET N-CH 1200V 17A PLUS247-3
IXTQ62N15P
IXTQ62N15P
IXYS
MOSFET N-CH 150V 62A TO3P
IXFE36N100
IXFE36N100
IXYS
MOSFET N-CH 1000V 33A SOT227B
IXTV72N30T
IXTV72N30T
IXYS
MOSFET N-CH 300V 72A PLUS220
IXGN200N60B3
IXGN200N60B3
IXYS
IGBT MOD 600V 300A 830W SOT227B
IXGH32N60BU1
IXGH32N60BU1
IXYS
IGBT 600V 60A 200W TO247AD
IXSK40N60BD1
IXSK40N60BD1
IXYS
IGBT 600V 75A 280W TO264
IXDN404SI-16
IXDN404SI-16
IXYS
IC GATE DRVR LOW-SIDE 16SOIC