IXFH46N65X3
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IXYS IXFH46N65X3

Manufacturer No:
IXFH46N65X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH46N65X3 Datasheet
ECAD Model:
-
Description:
MOSFET 46A 650V X3 TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:73mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:5.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2730 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):520W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH46N65X3 IXFH46N65X2  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 73mOhm @ 23A, 10V 76mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 5.2V @ 2.5mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2730 pF @ 25 V 4810 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 520W (Tc) 660W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXFH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3

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