IXFH40N50Q
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IXYS IXFH40N50Q

Manufacturer No:
IXFH40N50Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH40N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 40A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:140mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:130 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH40N50Q IXFH40N50Q2   IXFH30N50Q   IXFH40N30Q  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 300 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc) 40A (Tc) 30A (Tc) 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 500mA, 10V 160mOhm @ 500mA, 10V 160mOhm @ 15A, 10V 80mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4V @ 4mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V 110 nC @ 10 V 300 nC @ 10 V 140 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V 4850 pF @ 25 V 5700 pF @ 25 V 3100 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 500W (Tc) 560W (Tc) 360W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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