IXFH36N60P
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IXYS IXFH36N60P

Manufacturer No:
IXFH36N60P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH36N60P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 36A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:102 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):650W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH36N60P IXFH26N60P   IXFH30N60P   IXFH36N50P  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc) 26A (Tc) 30A (Tc) 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 18A, 10V 270mOhm @ 500mA, 10V 240mOhm @ 15A, 10V 170mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA 5V @ 4mA 5V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V 72 nC @ 10 V 82 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 25 V 4150 pF @ 25 V 4000 pF @ 25 V 5500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 650W (Tc) 460W (Tc) 500W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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