IXFH34N65X3
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IXYS IXFH34N65X3

Manufacturer No:
IXFH34N65X3
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH34N65X3 Datasheet
ECAD Model:
-
Description:
MOSFET 34A 650V X3 TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5.2V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2025 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH34N65X3 IXFH54N65X3   IXFH34N65X2  
Manufacturer IXYS IXYS IXYS
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 54A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 17A, 10V 59mOhm @ 27A, 10V 105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5.2V @ 2.5mA 5.2V @ 4mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 49 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2025 pF @ 25 V 3360 pF @ 25 V 3330 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 446W (Tc) 625W (Tc) 540W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXFH) TO-247 (IXFH) TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3

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