IXFH30N50Q
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IXYS IXFH30N50Q

Manufacturer No:
IXFH30N50Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH30N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 30A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH30N50Q IXFH40N50Q   IXFH30N50Q3   IXFH32N50Q   IXFH30N60Q   IXFH30N40Q   IXFH30N50   IXFH30N50P  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Active Active Obsolete Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V 600 V 400 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 40A (Tc) 30A (Tc) 32A (Tc) 30A (Tc) 30A (Tc) 30A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 15A, 10V 140mOhm @ 500mA, 10V 200mOhm @ 15A, 10V 160mOhm @ 16A, 10V 230mOhm @ 500mA, 10V 160mOhm @ 15A, 10V 160mOhm @ 15A, 10V 200mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA 4.5V @ 4mA 6.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4V @ 4mA 4V @ 4mA 5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V 130 nC @ 10 V 62 nC @ 10 V 190 nC @ 10 V 125 nC @ 10 V 95 nC @ 10 V 300 nC @ 10 V 70 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V ±20V ±20V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V 3800 pF @ 25 V 3200 pF @ 25 V 4925 pF @ 25 V 4700 pF @ 25 V 3300 pF @ 25 V 5700 pF @ 25 V 4150 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 360W (Tc) 500W (Tc) 690W (Tc) 360W (Tc) 500W (Tc) 300W (Tc) 360W (Tc) 460W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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