IXFH28N50Q
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IXYS IXFH28N50Q

Manufacturer No:
IXFH28N50Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH28N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 28A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:94 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH28N50Q IXFH21N50Q   IXFH24N50Q   IXFH26N50Q  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc) 21A (Tc) 24A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 14A, 10V 250mOhm @ 10.5A, 10V 230mOhm @ 12A, 10V 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 10 V 84 nC @ 10 V 95 nC @ 10 V 95 nC @ 10 V
Vgs (Max) ±30V ±30V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 25 V 3000 pF @ 25 V 3900 pF @ 25 V 3900 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 375W (Tc) 280W (Tc) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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