IXFH26N50Q
  • Share:

IXYS IXFH26N50Q

Manufacturer No:
IXFH26N50Q
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH26N50Q Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 26A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
486

Please send RFQ , we will respond immediately.

Similar Products

Part Number IXFH26N50Q IXFH26N60Q   IXFH26N55Q   IXFH28N50Q   IXFH21N50Q   IXFH24N50Q   IXFH26N50   IXFH26N50P  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 600 V 550 V 500 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 26A (Tc) 26A (Tc) 28A (Tc) 21A (Tc) 24A (Tc) 26A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 13A, 10V 250mOhm @ 13A, 10V 230mOhm @ 13A, 10V 200mOhm @ 14A, 10V 250mOhm @ 10.5A, 10V 230mOhm @ 12A, 10V 200mOhm @ 13A, 10V 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4.5V @ 4mA 4V @ 4mA 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 200 nC @ 10 V 92 nC @ 10 V 94 nC @ 10 V 84 nC @ 10 V 95 nC @ 10 V 160 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±30V ±30V ±20V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 25 V 5100 pF @ 25 V 3000 pF @ 25 V 3000 pF @ 25 V 3000 pF @ 25 V 3900 pF @ 25 V 4200 pF @ 25 V 3600 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 300W (Tc) 360W (Tc) 375W (Tc) 375W (Tc) 280W (Tc) 300W (Tc) 300W (Tc) 400W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

IRLZ34NSTRLPBF
IRLZ34NSTRLPBF
Infineon Technologies
MOSFET N-CH 55V 30A D2PAK
FDD6682
FDD6682
Fairchild Semiconductor
MOSFET N-CH 30V 75A DPAK
PJE8401_R1_00001
PJE8401_R1_00001
Panjit International Inc.
20V P-CHANNEL ENHANCEMENT MODE M
SIHK125N60E-T1-GE3
SIHK125N60E-T1-GE3
Vishay Siliconix
E SERIES POWER MOSFET POWERPAK 1
IPP034NE7N3GXKSA1
IPP034NE7N3GXKSA1
Infineon Technologies
MOSFET N-CH 75V 100A TO220-3
IRF1010NSTRRPBF
IRF1010NSTRRPBF
Infineon Technologies
MOSFET N-CH 55V 85A D2PAK
SIE802DF-T1-GE3
SIE802DF-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 60A 10POLARPAK
IPP80N06S2-09
IPP80N06S2-09
Infineon Technologies
IPP80N06 - 55V-60V N-CHANNEL AUT
MCP87022T-U/MF
MCP87022T-U/MF
Microchip Technology
MOSFET N-CH 25V 100A 8PDFN
STU16N60M2
STU16N60M2
STMicroelectronics
MOSFET N-CH 600V 12A IPAK
DMG10N60SCT
DMG10N60SCT
Diodes Incorporated
MOSFET N-CH 600V 12A TO220AB
AO4441L_001
AO4441L_001
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 60V 4A 8SOIC

Related Product By Brand

VBO20-16AO2
VBO20-16AO2
IXYS
BRIDGE RECT 1P 1.6KV 31A FO-A
DNA30EM2200PZ-TRL
DNA30EM2200PZ-TRL
IXYS
DIODE GEN PURP 2.2KV 30A TO263
MCC162-12IO1
MCC162-12IO1
IXYS
MOD THYRISTOR DUAL 1200V Y4-M6
MCC255-18IO1
MCC255-18IO1
IXYS
MOD THYRISTOR DUAL 1800V Y1-CU
IXFH16N120P
IXFH16N120P
IXYS
MOSFET N-CH 1200V 16A TO247AD
IXTP200N055T2
IXTP200N055T2
IXYS
MOSFET N-CH 55V 200A TO220AB
IXTK88N30P
IXTK88N30P
IXYS
MOSFET N-CH 300V 88A TO264
IXTQ74N15T
IXTQ74N15T
IXYS
MOSFET N-CH 150V 74A TO3P
IXDP20N60BD1
IXDP20N60BD1
IXYS
IGBT 600V 32A 140W TO220AB
IXGA20N60B
IXGA20N60B
IXYS
IGBT 600V 40A 150W TO263AA
IXGH20N60A
IXGH20N60A
IXYS
IGBT 600V 40A 150W TO247AD
IXCY30M45A
IXCY30M45A
IXYS
IC CURRENT REGULATOR DPAK