IXFH26N50P
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IXYS IXFH26N50P

Manufacturer No:
IXFH26N50P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH26N50P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 26A TO247AD
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH26N50P IXFH26N50P3   IXFH36N50P   IXFH26N60P   IXFH26N50Q   IXFH16N50P   IXFH22N50P   IXFH26N50  
Manufacturer IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
Product Status Active Active Active Active Obsolete Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V 500 V 600 V 500 V 500 V 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 26A (Tc) 36A (Tc) 26A (Tc) 26A (Tc) 16A (Tc) 22A (Tc) 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 13A, 10V 230mOhm @ 13A, 10V 170mOhm @ 500mA, 10V 270mOhm @ 500mA, 10V 200mOhm @ 13A, 10V 400mOhm @ 8A, 10V 270mOhm @ 11A, 10V 200mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA 5V @ 4mA 5V @ 4mA 5V @ 4mA 4.5V @ 4mA 5.5V @ 2.5mA 5.5V @ 2.5mA 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 42 nC @ 10 V 93 nC @ 10 V 72 nC @ 10 V 95 nC @ 10 V 43 nC @ 10 V 50 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±20V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 25 V 2220 pF @ 25 V 5500 pF @ 25 V 4150 pF @ 25 V 3900 pF @ 25 V 2250 pF @ 25 V 2630 pF @ 25 V 4200 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 400W (Tc) 500W (Tc) 540W (Tc) 460W (Tc) 300W (Tc) 300W (Tc) 350W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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