IXFH20N85X
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IXYS IXFH20N85X

Manufacturer No:
IXFH20N85X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH20N85X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 850V 20A TO247
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):850 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):540W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH20N85X IXFH50N85X   IXFH40N85X   IXFH30N85X  
Manufacturer IXYS IXYS IXYS IXYS
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 850 V 850 V 850 V 850 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 50A (Tc) 40A (Tc) 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 500mA, 10V 105mOhm @ 500mA, 10V 145mOhm @ 500mA, 10V 220mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA 5.5V @ 4mA 5.5V @ 4mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 152 nC @ 10 V 98 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V 4480 pF @ 25 V 3700 pF @ 25 V 2460 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 540W (Tc) 890W (Tc) 860W (Tc) 695W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247 (IXTH) TO-247 TO-247 (IXTH)
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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