IXFH18N60X
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IXYS IXFH18N60X

Manufacturer No:
IXFH18N60X
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH18N60X Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 18A TO247
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:230mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1440 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):320W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 (IXTH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH18N60X IXFH18N60P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 230mOhm @ 9A, 10V 400mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.5mA 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 50 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 25 V 2500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 320W (Tc) 360W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 (IXTH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

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