IXFH16N120P
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IXYS IXFH16N120P

Manufacturer No:
IXFH16N120P
Manufacturer:
IXYS
Package:
Tube
Datasheet:
IXFH16N120P Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1200V 16A TO247AD
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:950mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):660W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247AD (IXFH)
Package / Case:TO-247-3
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Similar Products

Part Number IXFH16N120P IXFH12N120P  
Manufacturer IXYS IXYS
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 8A, 10V 1.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 103 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 25 V 5400 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 660W (Tc) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247AD (IXFH) TO-247AD (IXFH)
Package / Case TO-247-3 TO-247-3

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